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IXFN 34N100
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
g fs
C iss
C oss
C rss
t d(on)
V DS = 15 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
18
40
9200
1200
300
41
S
pF
pF
pF
ns
t r
t d(off)
t f
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 ? (External),
65
110
30
ns
ns
ns
M4 screws (4x) supplied
Dim. Millimeter
Min. Max. Min.
A 31.50 31.88 1.240
Inches
Max.
1.255
Q g(on)
380
nC
B
C
7.80
4.09
8.20
4.29
0.307
0.161
0.323
0.169
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
65
185
0.05
0.18
nC
nC
K/W
K/W
D
E
F
G
H
J
K
L
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
M
N
O
P
Q
R
S
T
U
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
I S
I SM
V SD
V GS = 0 V
Repetitive;
pulse width limited by T JM
I F = I S , V GS = 0 V,
34
136
1.3
A
A
V
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
t rr
Q RM
I RM
I F = I S , -di/dt = 100 A/ μ s, V R = 100 VT J = 25 ° C
T J =125 ° C
T J = 25 ° C
180
330
2
8
ns
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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